ECS Journal of Solid State Science and Technology (2021) Volume 10, Number 72021
에피택셜 실리콘에서 수은(Hg) 프로브 쇼트키 정전용량 전압(MCV)에 대한 표면 준비 방법 평가
저자: Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton and Peter Horvath
주제: Epitaxial silicon; mercury probe; surface treatment; MERCURY C-V PROFILING; Capacitance-voltage characteristics; p-type; pre-treatment chamber
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