Lehighton-2000RS 方阻与迁移率测量仪

使用动态沉积远程等离子体氮化硅薄膜在低电阻率 n 型和 p 型晶体硅上实现极低的表面复合速度

作者: Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B Boreland, Bram Hoex, Armin G Aberle

主题: corona-voltage metrology; Non-Contact Measurement; photovoltaics; silicon defect density; Silicon Nitride; surface passivation; surface recombination velocity