Semilab

DLS-83D Deep Level Transient Spectroscopy

The DLS-83D is a compact, tabletop Deep Level Transient Spectroscopy (DLTS) system designed for high-sensitivity characterization and identification of electrically active defects (deep-level traps) and impurities in semiconductor wafers. It is ideal for universities, material science research centers, and advanced R&D labs, offering precise and reliable measurements in a small footprint.

関連出版物

Nature scientific reports2024

Radical electron-induced cellulose-semiconductors

著者: Mikio Fukuhara, Tomonori Yokotsuka, Tetsuo Samoto, Masahiko Kumadaki, Mitsuhiro Takeda, Toshiyuki Hashida
Hall effect measurementsMaterials scienceOrganic contaminationsemiconductor
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J. Electrochem. Soc., 147 10), pp. 3879-38882000

Analytical Tools for the Characterization of Power Devices

著者: H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, B. Simmnacher, B.O. Kolbesen, P. Tüttő, T. Pavelka, G. Wachutka
transition metalscontaminationcarrier lifetimesilicon defect density
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Applied Surface Science,70/71, 391-3951993

Ballistic Electron Emission Microscopy of Schottky Diodes on RF-Plasma-Treated Silicon

著者: L. Quattropani, K. Solt, P. Niedermann, I. Maggio-Aprile, O. Fischer, T. Pavelka
Schottky diodeRF plasma treated silicon
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Characterization and Metrology for ULSI Technology, 20002000

COCOS (Corona Oxide Characterization of Semiconductor) Non-Contact Metrology for Gate Dielectrics

著者: M. Wilson, J. Lagowski, L. Jastrzebski, A. Savtchouk, V. Faifer
COCOSDielectricsSemiconductor device characterizationDielectric thin films
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Materials Science & Engineering B91-92 2002), 192-2102002

Contactless Surface Charge Semiconductor Characterization

著者: D.K. Schröder
Silicon (Si)Electric measurementsMetal–insulator–semiconductor structuresSurface and interface states
出版物を読む
Semicond. Sci. Technol., 5, 1100-11041990

DLTS Investigation of Deep Levels in Bulk GaAs under Uniaxial Stress

著者: C.A. Londos, T. Pavelka
DLTSGaAs
出版物を読む
Journal of the Electrochemical Society 146 1999) 37731999

Diffusion of Iron in Silicon Dioxide

著者: D.A. Ramappa, W.B. Henley
diffusionironsilicon dioxide
出版物を読む
Materials Science and Engineering, B41989

Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors

著者: D. Huber, P. Eichinger, G. Ferenczi, T. Pavelka, G. Veszely
Microwave transient spectroscopydeep levelssemiconductor
出版物を読む
Materials Science Forum Vols.38-41, 803-808

Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps

著者: T. Pavelka and G. Ferenczi
Thermal emissiondeep trap
出版物を読む
Journ. of Crystal Growth, 210, 116-1212000

Investigation of Deep Levels and Precipitates Related to Molybdenum in Silicon by DLTS and Scanning Infrared Microscopy

著者: B. Sandhu, T. Ogikubo, H. Goto, V. Csapó, T. Pavelka
DLTSSIRMSilicon (Si)Mo
出版物を読む
Materials Science Forum Vols. 38-41, 469-4721989

Temperature Dependence of the Capture Cross Section of Seo as Measured by Microwave Absorption Spectroscopy (MAS)

著者: T. Pavelka and B. Hemm
Microwave Absorption Spectroscopy
出版物を読む
Appl.Phys.Letters 91, 0331102007

Three Dimensional Mapping of Thermal and Tunneling Electron Emission from InAs/GaAs Quantum Dots

著者: O. Engström, M.Kaniewska, W.Jung, M.Kaczmarczyk
Deep level transient spectroscopyquantum dotstunnelingconduction bands
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