Dispersive Microwave Transient Spectroscopy of Deep Levels in Semiconductors

The detection of thermal emission of captured carriers from deep levels is still considered as the most sensitive way to derive information on the electrically active impurities in semiconductors. To enhance the capabilities of probing thermal emission we are developing a microwave detection technique. The present paper reports on the theoretical description and experimental verification of the functioning of the microwave detection system. The possibilities of this measurement technique in defect studies are illustrated using measurements of the Si:Se⁰ system