Carrier Lifetime Mapping and Lifetime Studies of 4H-SiC Epilayers
掲載誌: Materials Research Society MRS, Spring Meeting
年: 2006
著者: J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster
carrier lifetimesilicon carbide (SiC)epilayer
出版物を読む
The effects of measurement technique and measurement conditions (e.g., injection level, temperature) on measured carrier lifetimes in n− 4H-SiC epilayers are investigated both experimentally and through detailed carrier dynamics simulations to better understand differences between reported lifetimes.
