WT-2000 Wafer Tester
Lifetime Tester (WT) systems are advanced and versatile measurement platforms designed to perform a wide range of material characterization tasks, including carrier lifetime measurement, resistivity mapping, metal contamination detection, and other critical semiconductor property evaluations. These systems combine multiple measurement techniques and come with all accessories necessary for mapping, to deliver comprehensive wafer analysis for both research and industrial applications.
Each system can be configured based on the user’s requirements by adding measurement capabilities and automation capabilities described below. Get in touch and find your perfect WT-2000 configuration!
関連出版物
Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, Proceedings of ALTECH 99, Leuven, Belgium, Electrochemical Society Proceedings Volume 99-16, 48-55.1999
Lifetime Measurements in SOI and Epi Structures
著者: T. Pavelka, Z. Batari
lifetimeSOIEPI
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arxiv.org, Condensed Matter, Materials Science2025
A Versatile System for Photoconductance Decay Measurement Across a Wide Range of Semiconductor Materials
著者: András Bojtor, Dávid Krisztián, Gábor Paráda, Ferenc Korsós, Sándor Kollarics, Gábor Csősz, Bence G. Márkus, László Forró, Ferenc Simon
uPCD
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J. Electrochem. Soc.148 2001) 11, p. G655.-G661.2001
Carrier Lifetime Analysis by Photoconductive Decay and Free Carrier Absorption Measurements
著者: H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
Silicon (Si)elemental semiconductorscarrier lifetimephotoconductivity
出版物を読む
Meeting of the Electrochemical Society, Phoenix2000
Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices
著者: H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
carrier lifetimeSilicon (Si)high power device
出版物を読む
Materials Research Society MRS, Spring Meeting2006
Carrier Lifetime Mapping and Lifetime Studies of 4H-SiC Epilayers
著者: J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster
carrier lifetimesilicon carbide (SiC)epilayer
出版物を読む
European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC) 2021 Conference Proceedings p.194 - 1972021
Carrier Lifetime Measurements of Monocrystalline Silicon Ingots Using Upgraded Laser E-PCD Technique
著者: D. Krisztián, F. Korsós, I. Saegh, G. Paráda, P. Tüttő, X. Dong and H. Deng, S. Wang, X. Chen
carrier lifetimeIngotMonocrystallinerecombination
出版物を読む
Journal of Materials Chemistry C, 2015, Advance Article2015
Carrier Scattering and Relaxation Dynamics in n-Type In0.83Ga0.17As as a Function of Temperature and Doping Density
著者: Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou
Carrier scatteringrelaxation dynamicsIn0.83Ga0.17As
出版物を読む
Nucl. Inst. Meth. B127-128, 388-3921997
Charge Carrier Lifetime Modification in Silicon by High Energy H+ or He+ Ion
著者: Nucl. Inst. Meth. B127-128, 388-392
carrier lifetimeSilicon (Si)Ion Implantation
出版物を読む
Materials Science Forum, 248-249, 101-1031997
Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation
著者: N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai
Charge Carrier LifetimeExcess Charge PocketIon ImplantationLifetime Tailoring
出版物を読む
World Conference on Photovoltaic Solar Energy Conversion, Osaka2003
Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control
著者: E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei
diffusioneddy current testingElectrical resistivityelemental semiconductors
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European Photovoltaic Solar Energy Conference and Exhibition2013
Comparison of Laser Textured Silicon Surfaces Prepared by Different Laser Sources
著者: Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa
Laser ProcessingSilicon (Si)Texturisation
出版物を読む
Solar Energy Materials and Solar Cells, Volume 218, 1107662020
Contactless Measurement of Sheet Resistance and Mobility of Inversion Charge Carriers on PV Wafers
著者: Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth
Characterisationinversion layer sheet resistancejunction photovoltage techniqueNon-contact
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Appl. Phys. Lett. 96 2010) 1229062010
Contactless Mobility Measurements of Inversion Charge Carriers on Silicon Substrates with SiO2 and HfO2 Gate Dielectrics
著者: J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka
DielectricsCarrier mobilityCharge carriersDielectric thin films
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Materials Science & Engineering B91-92 2002), 192-2102002
Contactless Surface Charge Semiconductor Characterization
著者: D.K. Schröder
Silicon (Si)Electric measurementsMetal–insulator–semiconductor structuresSurface and interface states
出版物を読む
EU PVSEC 2024 - Vienna, Austria Conference Proceedings2024
Contactless carrier lifetime characterization of silicon heterojunction structures at elevated temperatures
著者: Gergely Havasi, Dávid Krisztián, (Zs. Gombás -BME-, Z. Ádám -EcoSolifer Heterojunction Ltd.), Ferenc Korsós
laser controlled photoconductance decay (PCD)
出版物を読む
TI Technical Journal, Engineering Quality, April-June, 19981998
Contamination reduction and control in integrated circiut manufacturing
著者: J.E. Steinle
出版物を読む
Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16 IEEE International Conference on2008
Control of Laser Induced Interface Traps with In-line Corona Charge Metrology
著者: J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don
corona chargein-linetraps
出版物を読む
J. Phys.: Condensed Matter, 14 2002), 13119-131252002
Detection of Low-Level Copper Contamination in p-Type Silicon by Means of Microwave Photoconductive Decay Measurements
著者: M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen
recombination of copperMicrowave Photoconductive Decay (μ-PCD)high-intensity bias lightinterstitial copper
出版物を読む
Analytical Sciences, The Japan Society for Analytical Chemistry, Vol. 19, July 2003, pp. 1051-10542003
Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry
著者: H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim
metallic impurities distributionetching techniqueET-AAS
出版物を読む
Solar Energy Materials and Solar Cells 113 2013) 522013
Development of a-Si:H/c-Si Heterojunctions for the i2-Module Concept: Low-Temperature Passivation and Emitter Formation on Wafers Bonded to Glass
著者: J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans
PECVDHeterojunctionSilicone bondingModule-level processing
出版物を読む
Jpn. J. Appl. Phys., Vol. 34 1995), pp. 932-9361995
Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay
著者: L. Köster, P. Blöchl, L. Fábry
element specific drive-in treatmentsMicrowave Photoconductive Decay (μ-PCD)metal contaminationinjection level
出版物を読む
Cleaning Technology in Semiconductor Device Manufacturing, Proceedings of the Sixth International Symposium Oct.1999), Vol. 99-36, pages 59-681999
Evaluation of Advanced Pre-Gate Cleanings
著者: C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif
pre-gate cleaningparticle removalmetal removalsurface microroughness
出版物を読む
TI Technical Journal, Engineering Technology, April-June, 19991999
Evaluation of precipitation and denuded zone depth on different silicon materials
著者: J.E. Steinle
出版物を読む
European Photovoltaic Solar Energy Conference and Exhibition 7-11 June 2004, Paris, France)
First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research
著者: S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich
Fourier transform infrared spectroscopyMicrowave-induced photoconductance decayLight beam induced current mappingSpectral Response
出版物を読む
Solid-State Phenomena, Vols. 69-70, pp. 291-294.1999
Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing
著者: M. Yli-Koski, J. Mellin, V. Ovchinnikov
GetteringPhosphorous Ion ImplantationSilicon (Si)surface photovoltage
出版物を読む
J. Electrochem. Soc., 143, No. 1, 216-2201996
Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement
著者: T.S. Horányi, P. Tüttő, Cs. Kovacsics
oxidationSilicon (Si)temperaturenitrogen compounds
出版物を読む
International Conference on Advanced Thermal Processing of Semiconductors RTP), 20102010
Impact of Laser Anneal Thermal Budget on the Quality of Thin SiGe Channels with a High Ge Content
著者: E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka
Ge-Si alloysX-ray diffractionelemental semiconductorslaser beam annealing
出版物を読む
SiliconPV 2024 Conference Proceedings2024
Implied J-V curves recorded at elevated temperatures using light controlled heating
著者: Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu
laser controlled photoconductance decay (PCD)
出版物を読む
EPJ Photovoltaics 13, 3 (2022)2022
Improved accuracy of eddy-current sensor based carrier lifetime measurement using laser excitation
著者: Dávid Krisztián*, Ferenc Korsós, Ilias Saegh, Gábor Paráda, Martin Kovács, Zita Verdon, Csaba Jobbágy, Péter Tüttö, Xueqian Dong, Hao Deng, Shasha Wang and Xiaobo Chen
carrier lifetimeeddy current testingphotoconductive decayE-PCD CARRIER LIFETIME FOR MONO-Si
出版物を読む
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)2017
Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water
著者: Sara Bakhshi, Ngwe Zin, Kristopher O Davis, Marshall Wilson, Ismail Kashkoush, Winston V Schoenfeld
aluminium compoundsaluminum oxidecarrier lifetimepassivation
出版物を読む
Applied Surface Science, 63, 306-3111993
In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface
著者: T.S. Horányi, T. Pavelka, P. Tüttő
lifetimeSilicon (Si)passivated surface
出版物を読む
Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633
Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
著者: G. Ferenczi, T. Pavelka, P. Tüttő
contamination analysisSilicon (Si)
出版物を読む
AIP Conference Proceedings Volume 2826, Issue 1 (2023)2023
Integrated measurement of the actual and small perturbation lifetimes with improved accuracy
著者: Dávid Krisztián; Ferenc Korsós; Enikő Kis; Gábor Paráda; Péter Tüttő
carrier lifetimelifetime measurementsphotoconductive decaysolar cells
出版物を読む
Solid State Phenomena, 32-33, 609-6141993
Investigation of Recombination Properties of Ti Double Donor in Silicon
著者: G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster
recombinationTi donorSilicon (Si)
出版物を読む
China Semiconductor Technology International Conference 2014 CSTIC 2014)2014
Lifetime Characterization of mc:Si Bricks by Upgraded μ-PCD Technique
著者: F. Korsós, A. Jász
Microwave Photoconductive Decay (μ-PCD)photoconductive decaysurface recombination
出版物を読む
International Conference on Crystalline Silicon Photovoltaics SiliconPV 2013)2013
Lifetime Measurements on Attached Epilayers and Detached Epifoils Grown on Reorganised Porous Silicon Showing a Bulk Lifetime Exceeding 100 μs
著者: H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans
epilayerbulk lifetimeporous siliconsurface recombination velocity
出版物を読む
IEEE Photovoltaic Specialists Conference, IEEE NewYork 2000.) p 99.2000
Lifetime mapping of Si Wafers by an Infrared Camera
著者: M. Bail, J. Kentsch, R. Brendel, M. Schulz
carrier lifetimeinfrared camera
出版物を読む
Proceedings of the 6th energie "Marie-Curie" Research Training Fellowship Conference, Paris, May, 2000.2000
Low-Cost High Efficient Multicrystalline Silicon for Photovoltaics
著者: M.B.I. Diaz, C. Haessler
μ-PCD; etch pit density (EPD) mappingresistivity topography
出版物を読む
European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, Spain, 6.-10. June 20052005
Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion
著者: J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking
carrier lifetimePOCl3diffusion
出版物を読む
Solid State Phenomena Vols. 108-109 pp. 643-6482005
Measurement of Copper in p-Type Silicon using Charge-Carrier Lifetime Methods
著者: M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Copper (Cu)Silicon (Si)surface photovoltageMicrowave Photoconductive Decay (μ-PCD)
出版物を読む
ICSCRM 20052005
Microwave Photoconductive Decay Mapping and Investigation of Lifetimes in 4H-SiC Epitaxial Layers
著者: J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub
silicon carbide (SiC)photoconductive decayepitaxial layer
出版物を読む
Advanced Energy & Sustainability Research 2024.2024
Millisecond-Scale Charge-Carrier Recombination Dynamics in the CsPbBr3 Perovskite
著者: András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon
carrier densitycarrier lifetimeCarrier mobilityCharge Carrier Lifetime
出版物を読む
EU PVSEC / WCPEC-8 Conference Proceedings2022
Modelling of Eddy-Current Measurement for Inhomogeneous Charge Carrier Depth Profile
著者: D. Krisztián, F. Korsós, M. Kovács, F. Ujhelyi, P. Tüttö
depth profileeddy current testingphotovoltaic cellsPV
出版物を読む
Microelectronic Engeneering, 84, 2251-22542007
Monitoring Plasma Nitridation of HfSiOx by Corona Charge Measurements
著者: J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch
HfSiONitridationcorona chargeGate dielectric
出版物を読む
Semiconductor Fabtech, 4th Edition, 247-2491996
New Possibilities for the Microwave Photoconductive Decay Technique
著者: T. Pavelka
出版物を読む
European Photovoltaic Solar Energy Conference and Exhibition2011
New µ-PCD Based Method for Sorting Boron and Gallium Doped Feedstock Material
著者: F. Korsós, G. Paráda, D. Fátay
Wafer-Based Silicon Solar CellsSilicon FeedstockCrystallisationWafering
出版物を読む
TI Technical Journal, Engineering Technology, 20012001
Process induced oxide and interface charges and their reactivity with carriers in bulk silicon
著者: J.E. Steinle
出版物を読む
Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, Eds., American Society for Testing and Materials, 145-1542000
Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique
著者: T. Pavelka, D.C. Gupta and G.A. Brown
Silicon (Si)epitaxial wafercarrier lifetimesurface/interface recombination velocity
出版物を読む
Appl. Phys. Letters 87, 0321092005
Quantitative Copper Measurement in Oxidized p-Type Silicon Wafers using Microwave Photoconductivity Decay
著者: H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Copper (Cu)illuminationprecipitationSilicon (Si)
出版物を読む
Physica Status Solidi a) Volume 209 Issue 10, pages 1884–18932012
Recombination via Point Defects and their Complexes in Solar Silicon
著者: A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi
Laplace deep level transient spectroscopyminority carrier lifetimepassivationrecombination
出版物を読む
IEEE Transactions on Electron Devices, Vol. 50, No.4, pp 906.2003
Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization
著者: D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton
MOS capacitorscarrier lifetimeelectron-hole recombinationsemiconductor device measurement
出版物を読む
Solar Energy Materials and Solar Cells Volume 260, 15 September 2023, 1124612023
Simultaneous measurement of charge carrier concentration, mobility, and lifetime
著者: Dávid Krisztián, Ferenc Korsós, Gergely Havasi
carrier lifetimeCarrier mobilityCharge carriersconcentration profile
出版物を読む
Jpn. J. Appl. Phys. Vol 40 2001) pp. L1003-L1004, Part2, No 10A, 1 Oct. 20012001
Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment
著者: H. Takato, I. Sakata, R. Shimokawa
surface passivationquinhydrone/ethanol treatmentMicrowave Photoconductive Decay (μ-PCD)
出版物を読む
Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-5421999
Temperature dependence of carrier recombination lifetimes in n-type silicon
著者: A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka
出版物を読む
European Photovoltaic Solar Energy Conference and Exhibition2014
Transient Method for Lifetime Characterization of Monocrystalline Si Ingots
著者: G. Paráda, F. Korsós, P. Tüttő
carrier lifetimeMonocrystallineIngot
出版物を読む
International Symposium on High Purity Silicon1998
Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method
著者: A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen
high purity siliconSurface Charge Profiler (SCP)Doping measurements
出版物を読む
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From GaAs to SiC: Measuring Resistivity in Compound Semiconductors
Discover why accurate resistivity measurement is the key to unlocking the full potential of compound semiconductors in powering the future of energy, mobility, and high-frequency technologies.
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How Does Advanced Metrology Benefit the PV Industry?
Explore how advanced metrology plays a crucial role in the photovoltaic industry by enhancing efficiency, ensuring quality control, supporting research and development, and reducing costs.
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