Measurement of Copper in p-Type Silicon using Charge-Carrier Lifetime Methods
掲載誌: Solid State Phenomena Vols. 108-109 pp. 643-648
年: 2005
著者: M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
Copper (Cu)Silicon (Si)surface photovoltageMicrowave Photoconductive Decay (μ-PCD)
出版物を読むWe compare SPV technique with µ−PCD for the determination of recombination activity of copper precipitates in p-Si. The copper precipitates were formed in bulk silicon through illumination at room temperature. We observed that the recombination activities of copper precipitates measured with SPV are higher than the ones measured with µ−PCD technique. However, it seems that the copper detection sensitivity is about the same with SPV and µ−PCD techniques.
