Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation
掲載誌: Materials Science Forum, 248-249, 101-103
年: 1997
著者: N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai
Charge Carrier LifetimeExcess Charge PocketIon ImplantationLifetime TailoringMicrowave Photoconductive Decay (μ-PCD)Radiation DamageRecombination Activity
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MeV H+ or He+ was implanted into CZ-Si to set carrier lifetime with the aim of customisation of power devices. Commercial Microwave Photoconductice Decay (µ-PCD, Semilab, Inc.) equipment was intended to use for wafer characterization. Realistic evaluation of µ-PCD data required a model to handle cases when the probing carrier pocket does not match the desired defect distribution. Parameters of this multilayer model were extracted from vacancy distribution using the TRIM code.
