Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon
掲載誌: Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633
著者: G. Ferenczi, T. Pavelka, P. Tüttő
contamination analysisSilicon (Si)
出版物を読むMicrowave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral distribution maps of different metal contaminants in a silicon wafer.
