Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization
掲載誌: IEEE Transactions on Electron Devices, Vol. 50, No.4, pp 906.
年: 2003
著者: D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton
MOS capacitorscarrier lifetimeelectron-hole recombinationsemiconductor device measurementsemiconductor epitaxial layersSilicon (Si)space-charge limited conduction
出版物を読むWe have made recombination and generation lifetime measurements on silicon p-epitaxial layers on p/sup +/ and on p-substrates. The recombination lifetimes are dominated by surface/interface recombination for layers only a few microns thick. By coupling measurements of p/p with those of p/p/sup +/ samples, it is possible to extract the epi-layer lifetime. For p/p/sup +/ samples, recombination lifetimes are poorly suited to characterize epi-layers. Generation lifetime measurements are eminently suitable for epi-layer characterization, since carrier generation occurs in the space-charge region confined to the epitaxial layer, and when coupled with corona charge/Kelvin probe, allow contact-less measurements.
