Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique
掲載誌: Gate Dielectric Integrity: Material, Process and Tool Qualification, ASTM STP 1382, Eds., American Society for Testing and Materials, 145-154
年: 2000
著者: T. Pavelka, D.C. Gupta and G.A. Brown
Silicon (Si)epitaxial wafercarrier lifetimesurface/interface recombination velocity
出版物を読むThe microwave photoconductive decay (μ-PCD) and the surface photo voltage (SPV) techniques are proved to be powerful methods in the qualification of semiconductor bulk materials. They are applied best for standard wafers with homogeneous material quality. However, both methods have their limitations when measuring epitaxial layer (epi) wafers or silicon on insulator (SOI) structures. In its conventional realization the SPV measurement is limited by the active layer thickness. On the other hand an epi layer grown on highly doped substrate typically does not generate high enough signal in a μ-PCD measurement.
