Temperature dependence of carrier recombination lifetimes in n-type silicon

掲載誌: Proceedings of the International Semiconductor Device Research Symposium (Charlottesville 1999), pp. 539-542

年: 1999

著者: A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka