Lehighton-2000RS 電阻與遷移率量測儀

使用動態沉積遠程等離子體氮化矽薄膜在低電阻率 n 型和 p 型晶體矽上實現極低的表面複合速度

作者: Shubham Duttagupta, Fen Lin, Marshall Wilson, Matthew B Boreland, Bram Hoex, Armin G Aberle

主題: corona-voltage metrology; Non-Contact Measurement; photovoltaics; silicon defect density; Silicon Nitride; surface passivation; surface recombination velocity