外延硅上汞 (Hg) 探针肖特基电容电压 (MCV) 表面处理方法的评估
作者: Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton and Peter Horvath
主题: Epitaxial silicon; mercury probe; surface treatment; MERCURY C-V PROFILING; Capacitance-voltage characteristics; p-type; pre-treatment chamber

