Extracting Electrical Properties of CdTe, CdSeTe and CdSe Thin Films using a Parallel Dipole Line Hall Effect System

Electrical properties of as-deposited CdSe, as-deposited and CdCl2 treated Cd'Te, and CdCl2 treated CdSeTe/CdTe films were investigated using a high sensitivity parallel dipole line (PDL) Hall effect system. The PDL Hall offers AC, and traditional DC magnetic field modes with an increased signal to noise ratio (S/N) for more reliable and accurate measurements. The steps used in the measurement process for the PDL Hall effect measurements are provided in detail. Carrier concentration, mobility, resistivity, sheet resistance and majority charge carrier type (p or n) of the films can be extracted from the Hall measurements. Schottky type behaviour has been observed from the resistivity measurements during the I- V scans of CdTe thin films. More suitable material for sample contacts, such as gold will be used to eliminate this non-ohmic behaviour. This will provide an improved signal to extract reliable results.