Monitoring Ion Implantation Energy Using Non‐contact Characterization Methods

State‐of‐the‐art ultra‐shallow junctions are produced using extremely low ion implant energies, down to the range of 1–3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage‐based sheet resistance measurements after anneal are suitable for this purpose.

‍