Review of applications of Defect Photoluminescence Imaging (DPLI) during IC processing

Published to: 19th International Workshop on Junction Technology (IWJT) proceedings

Year: 2019

Author: L. Jastrzebski, R. Duru, D. Le-Cunff, M. Cannac S. Joblot, I. Mica, M.L.Polignano, A.Galbiati, P. Monge Roffarello,G. Nadudvari, Z. Kiss, I. Lajtos, A. Pongracz, G. Molnár, M. Nagy, L. Dudás, P. Basa, B.Greenwood, J.Gambino

crystal defectsdefect inspectionIon ImplantationPhotoluminescence Imagingprocess monitoringDeep Trenches

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As Si is an indirect band gap material, the PL generated by phonon assisted band-to-band (B2B) radiative recombination (of energy equal to energy gap of Si) is very weak; about 10 orders of magnitude lower than the exciting photon flux [1]. If crystallographic defects are present then at room temperature an additional broad defect PL peak is generated (DPL) with energy smaller than the band gap of Si [1], [2], [3] . At room temperature, defect-band PL intensity is orders of magnitude lower than the B2B intensity [1].