Surface Charge Profiling — An advancement in Ion Implant Monitoring

As the industry gets on the new technology nodes of 65nm and 45nm devices, implant monitor becomes even more crucial for consistent device performance. Common practice has been the use of 4‐point probe with sheet resistance and thermal wave technique with the implant damage. However, both techniques have limitations on sensitivity. With the need of monitoring smaller variations in the ion implantation process, there is a need for a new and better approach on implant monitoring.

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