外延矽上汞 (Hg) 探針肖特基電容電壓 (MCV) 表面處理方法的評估
作者: Cristina Sanna, Patrick Taylor, Robert Hillard, Samuel Frey, Dan McDonald, Jonny Hoglund, Gyula Zsakai, Attila Marton and Peter Horvath
主題: Epitaxial silicon; mercury probe; surface treatment; MERCURY C-V PROFILING; Capacitance-voltage characteristics; p-type; pre-treatment chamber

