Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation

MeV H⁺ or He⁺ was implanted into CZ-Si to set carrier lifetime with the aim of customisation of power devices. Commercial Microwave Photoconductice Decay (µ-PCD, Semilab, Inc.) equipment was intended to use for wafer characterization. Realistic evaluation of µ-PCD data required a model to handle cases when the probing carrier pocket does not match the desired defect distribution. Parameters of this multilayer model were extracted from vacancy distribution using the TRIM code.