WT-2000 Wafer Tester

Lifetime Tester (WT) systems are advanced and versatile measurement platforms designed to perform a wide range of material characterization tasks, including carrier lifetime measurement, resistivity mapping, metal contamination detection, and other critical semiconductor property evaluations. These systems combine multiple measurement techniques and come with all accessories necessary for mapping, to deliver comprehensive wafer analysis for both research and industrial applications.

Each system can be configured based on the user’s requirements by adding measurement capabilities and automation capabilities described below. Get in touch and find your perfect WT-2000 configuration!

WT-2000 Wafer Tester

Related Publications

Lifetime Measurements in SOI and Epi Structures

A Versatile System for Photoconductance Decay Measurement Across a Wide Range of Semiconductor Materials

Carrier Lifetime Analysis by Photoconductive Decay and Free Carrier Absorption Measurements

Carrier Lifetime Control and Characterization of High-Resistivity Silicon Used for High-Power Devices

Carrier Lifetime Mapping and Lifetime Studies of 4H-SiC Epilayers

Carrier Lifetime Measurements of Monocrystalline Silicon Ingots Using Upgraded Laser E-PCD Technique

Carrier Scattering and Relaxation Dynamics in n-Type In0.83Ga0.17As as a Function of Temperature and Doping Density

Charge Carrier Lifetime Modification in Silicon by High Energy H+ or He+ Ion

Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation

Comparative Study on Emitter Sheet Resitivity Measurements for Inline Quality Control

Comparison of Laser Textured Silicon Surfaces Prepared by Different Laser Sources

Contactless Measurement of Sheet Resistance and Mobility of Inversion Charge Carriers on PV Wafers

Contactless Mobility Measurements of Inversion Charge Carriers on Silicon Substrates with SiO2 and HfO2 Gate Dielectrics

Contactless Surface Charge Semiconductor Characterization

Contactless carrier lifetime characterization of silicon heterojunction structures at elevated temperatures

Contamination reduction and control in integrated circiut manufacturing

Control of Laser Induced Interface Traps with In-line Corona Charge Metrology

Detection of Low-Level Copper Contamination in p-Type Silicon by Means of Microwave Photoconductive Decay Measurements

Determination of Metallic Impurities in a Silicon Wafer by Local Etching and Electrothermal Atomic Absorption Spectrometry

Development of a-Si:H/c-Si Heterojunctions for the i2-Module Concept: Low-Temperature Passivation and Emitter Formation on Wafers Bonded to Glass

Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay

Evaluation of Advanced Pre-Gate Cleanings

Evaluation of precipitation and denuded zone depth on different silicon materials

First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research

Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement

Impact of Laser Anneal Thermal Budget on the Quality of Thin SiGe Channels with a High Ge Content

Implied J-V curves recorded at elevated temperatures using light controlled heating

Improved accuracy of eddy-current sensor based carrier lifetime measurement using laser excitation

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface

Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

Integrated measurement of the actual and small perturbation lifetimes with improved accuracy

Investigation of Recombination Properties of Ti Double Donor in Silicon

Lifetime Characterization of mc:Si Bricks by Upgraded μ-PCD Technique

Lifetime Measurements on Attached Epilayers and Detached Epifoils Grown on Reorganised Porous Silicon Showing a Bulk Lifetime Exceeding 100 μs

Lifetime mapping of Si Wafers by an Infrared Camera

Low-Cost High Efficient Multicrystalline Silicon for Photovoltaics

Making Use of Silicon Wafers with Low Lifetimes by Adequate POCl3 Diffusion

Measurement of Copper in p-Type Silicon using Charge-Carrier Lifetime Methods

Microwave Photoconductive Decay Mapping and Investigation of Lifetimes in 4H-SiC Epitaxial Layers

Millisecond-Scale Charge-Carrier Recombination Dynamics in the CsPbBr3 Perovskite

Modelling of Eddy-Current Measurement for Inhomogeneous Charge Carrier Depth Profile

Monitoring Plasma Nitridation of HfSiOx by Corona Charge Measurements

New Possibilities for the Microwave Photoconductive Decay Technique

New µ-PCD Based Method for Sorting Boron and Gallium Doped Feedstock Material

Process induced oxide and interface charges and their reactivity with carriers in bulk silicon

Qualification of Epi Layers and Interface Properties by an Improved µ-PCD Technique

Quantitative Copper Measurement in Oxidized p-Type Silicon Wafers using Microwave Photoconductivity Decay

Recombination via Point Defects and their Complexes in Solar Silicon

Silicon Epitaxial Layer Recombination and Generation Lifetime Characterization

Simultaneous measurement of charge carrier concentration, mobility, and lifetime

Surface Passivation Effect of Silicon Substrates due to Quinhydrone/Ethanol Treatment

Temperature dependence of carrier recombination lifetimes in n-type silicon

Transient Method for Lifetime Characterization of Monocrystalline Si Ingots

Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method

Related Whitepapers

From GaAs to SiC: Measuring Resistivity in Compound Semiconductors

How Does Advanced Metrology Benefit the PV Industry?

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