Investigation of Recombination Properties of Ti Double Donor in Silicon

The recombination properties of melt Ti doped Cz Si wafers were studied by microwave photoconductivity decay (µ-PCD) and surface photovoltage (SPV) lifetime measurement techniques. It was found that the µ-PCD lifetime is in direct correspondance with the recombination lifetime calculated using deep level parameters of Ti in Si as a double - donor recombination centre.