Gettering of Unintentionally Contaminated Silicon Wafers by Phosphorous Ion Implantation and Annealing

In this paper, we present a study of gettering of uninterntional contamination. The phosphorous ion implanted layer was used as a getter. SPV- and µ-PCD-measurement results indicated that gettering efficiency were related dose of ion implantation. The dose of 5e15 cm^-2 was high enough for effective gettering.