In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface

The conventional photoconductive decay lifetime measuring technique is extended for the measurement of bulk lifetime maps on whole silicon wafers by the application of in situ chemical surface passivation. The applicability of this technique is demonstrated by comparing the lifetime maps, based on measurements on oxidized and chemically passivated surfaces, and the linear correlation between the concentration of recombination centers and the minority carrier lifetime.

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