Semilab

Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

Published to: Japanese Journ. of Applied Physics, 30, No.12B, 3630-3633
Author: G. Ferenczi, T. Pavelka, P. Tüttő
contamination analysisSilicon (Si)
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Microwave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral distribution maps of different metal contaminants in a silicon wafer.

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