수명 테스터(WT) 시스템은 캐리어 수명 측정, 저항률 매핑, 금속 오염 감지 및 기타 중요한 반도체 특성 평가를 포함하여 광범위한 재료 특성화 작업을 수행하도록 설계된 고급 다목적 측정 플랫폼입니다. 이러한 시스템은 여러 측정 기술을 결합하고 매핑에 필요한 모든 액세서리와 함께 제공되어 연구 및 산업 응용 분야 모두에 대한 포괄적인 웨이퍼 분석을 제공합니다.
각 시스템은 아래에 설명된 측정 기능 및 자동화 기능을 추가하여 사용자 요구에 맞게 구성할 수 있습니다. 지금 문의하여 최적의 WT-2000 구성을 확인해 보세요!
WT-2000 웨이퍼 테스터
저자: T. Pavelka, Z. Batari
주제: lifetime; SOI; EPI
저자: András Bojtor, Dávid Krisztián, Gábor Paráda, Ferenc Korsós, Sándor Kollarics, Gábor Csősz, Bence G. Márkus, László Forró, Ferenc Simon
주제: uPCD
저자: H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
주제: Silicon (Si); elemental semiconductors; carrier lifetime; photoconductivity
저자: H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka
주제: carrier lifetime; Silicon (Si); high power device
저자: J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster
주제: carrier lifetime; silicon carbide (SiC); epilayer
저자: D. Krisztián, F. Korsós, I. Saegh, G. Paráda, P. Tüttő, X. Dong and H. Deng, S. Wang, X. Chen
주제: carrier lifetime; Ingot; Monocrystalline; recombination; Silicon (Si); E-PCD CARRIER LIFETIME FOR MONO-S
저자: Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou
주제: Carrier scattering; relaxation dynamics; In0.83Ga0.17As
저자: Nucl. Inst. Meth. B127-128, 388-392
주제: carrier lifetime; Silicon (Si); Ion Implantation
저자: N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai
주제: Charge Carrier Lifetime; Excess Charge Pocket; Ion Implantation; Lifetime Tailoring; Microwave Photoconductive Decay (μ-PCD); Radiation Damage; Recombination Activity
저자: E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei
주제: diffusion; eddy current testing; Electrical resistivity; elemental semiconductors; phosphorus; quality control; Silicon (Si); solar cells; surface photovoltage
저자: Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa
주제: Laser Processing; Silicon (Si); Texturisation
저자: Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth
주제: Characterisation; inversion layer sheet resistance; junction photovoltage technique; Non-contact; PV; SHEET RESISTANCE MEASUREMENT
저자: J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka
주제: Dielectrics; Carrier mobility; Charge carriers; Dielectric thin films; Metrology
저자: D.K. Schröder
주제: Silicon (Si); Electric measurements; Metal–insulator–semiconductor structures; Surface and interface states; Contact potential; Work function; Epitaxial silicon
저자: Gergely Havasi, Dávid Krisztián, (Zs. Gombás -BME-, Z. Ádám -EcoSolifer Heterojunction Ltd.), Ferenc Korsós
주제: laser controlled photoconductance decay (PCD)
저자: J.E. Steinle
저자: J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don
주제: corona charge; in-line; traps
저자: M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen
주제: recombination of copper; Microwave Photoconductive Decay (μ-PCD); high-intensity bias light; interstitial copper; Ham's kinetics; Si–SiO2 interface
저자: H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim
주제: metallic impurities distribution; etching technique; ET-AAS
저자: J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans
주제: PECVD; Heterojunction; Silicone bonding; Module-level processing
저자: L. Köster, P. Blöchl, L. Fábry
주제: element specific drive-in treatments; Microwave Photoconductive Decay (μ-PCD); metal contamination; injection level; Schockley-Read-Hall-recombination model
저자: C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif
주제: pre-gate cleaning; particle removal; metal removal; surface microroughness; surface passivation
저자: J.E. Steinle
저자: S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich
주제: Fourier transform infrared spectroscopy; Microwave-induced photoconductance decay; Light beam induced current mapping; Spectral Response
저자: M. Yli-Koski, J. Mellin, V. Ovchinnikov
주제: Gettering; Phosphorous Ion Implantation; Silicon (Si); surface photovoltage
저자: T.S. Horányi, P. Tüttő, Cs. Kovacsics
주제: oxidation; Silicon (Si); temperature; nitrogen compounds; oxygen compounds; quartz; surface treatment
저자: E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka
주제: Ge-Si alloys; X-ray diffraction; elemental semiconductors; laser beam annealing; semiconductor epitaxial layers; semiconductor junctions; Silicon (Si)
저자: Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu
주제: laser controlled photoconductance decay (PCD)
저자: Dávid Krisztián*, Ferenc Korsós, Ilias Saegh, Gábor Paráda, Martin Kovács, Zita Verdon, Csaba Jobbágy, Péter Tüttö, Xueqian Dong, Hao Deng, Shasha Wang and Xiaobo Chen
주제: carrier lifetime; eddy current testing; photoconductive decay; E-PCD CARRIER LIFETIME FOR MONO-Si
저자: Sara Bakhshi, Ngwe Zin, Kristopher O Davis, Marshall Wilson, Ismail Kashkoush, Winston V Schoenfeld
주제: aluminium compounds; aluminum oxide; carrier lifetime; passivation; photovoltaic cells; Silicon (Si); Silicon Nitride; surface passivation
저자: T.S. Horányi, T. Pavelka, P. Tüttő
주제: lifetime; Silicon (Si); passivated surface
저자: G. Ferenczi, T. Pavelka, P. Tüttő
주제: contamination analysis; Silicon (Si)
저자: Dávid Krisztián; Ferenc Korsós; Enikő Kis; Gábor Paráda; Péter Tüttő
주제: carrier lifetime; lifetime measurements; photoconductive decay; solar cells
저자: G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster
주제: recombination; Ti donor; Silicon (Si)
저자: F. Korsós, A. Jász
주제: Microwave Photoconductive Decay (μ-PCD); photoconductive decay; surface recombination
저자: H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans
주제: epilayer; bulk lifetime; porous silicon; surface recombination velocity; Microwave Photoconductive Decay (μ-PCD); QSSPC; PL; PC1D
저자: M. Bail, J. Kentsch, R. Brendel, M. Schulz
주제: carrier lifetime; infrared camera
저자: M.B.I. Diaz, C. Haessler
주제: μ-PCD; etch pit density (EPD) mapping; resistivity topography
저자: J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking
주제: carrier lifetime; POCl3; diffusion
저자: M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
주제: Copper (Cu); Silicon (Si); surface photovoltage; Microwave Photoconductive Decay (μ-PCD)
저자: J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub
주제: silicon carbide (SiC); photoconductive decay; epitaxial layer
저자: András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon
주제: carrier density; carrier lifetime; Carrier mobility; Charge Carrier Lifetime; Charge carriers; photovoltaics; PV; recombination; Charge carrier density; PDL Hall
저자: D. Krisztián, F. Korsós, M. Kovács, F. Ujhelyi, P. Tüttö
주제: depth profile; eddy current testing; photovoltaic cells; PV; silicon solar cells; solar cells; EU PVSEC; EU PVSEC; European Photovoltaic Solar Energy Conference and Exhibition; Silicon PV; Semilab to present paper at Silicon PV; Silicon
저자: J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch
주제: HfSiO; Nitridation; corona charge; Gate dielectric; Gate leakage
저자: T. Pavelka
저자: F. Korsós, G. Paráda, D. Fátay
주제: Wafer-Based Silicon Solar Cells; Silicon Feedstock; Crystallisation; Wafering; Microwave Photoconductive Decay (μ-PCD); carrier lifetime
저자: J.E. Steinle
저자: T. Pavelka, D.C. Gupta and G.A. Brown
주제: Silicon (Si); epitaxial wafer; carrier lifetime; surface/interface recombination velocity
저자: H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka
주제: Copper (Cu); illumination; precipitation; Silicon (Si); annealing
저자: A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi
주제: Laplace deep level transient spectroscopy; minority carrier lifetime; passivation; recombination; silicon solar cells; transition metals
저자: D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton
주제: MOS capacitors; carrier lifetime; electron-hole recombination; semiconductor device measurement; semiconductor epitaxial layers; Silicon (Si); space-charge limited conduction
저자: Dávid Krisztián, Ferenc Korsós, Gergely Havasi
주제: carrier lifetime; Carrier mobility; Charge carriers; concentration profile; lifetime measurements; photoconductive decay; silicon solar cells
저자: H. Takato, I. Sakata, R. Shimokawa
주제: surface passivation; quinhydrone/ethanol treatment; Microwave Photoconductive Decay (μ-PCD)
저자: A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka
저자: G. Paráda, F. Korsós, P. Tüttő
주제: carrier lifetime; Monocrystalline; Ingot
저자: A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen
주제: high purity silicon; Surface Charge Profiler (SCP); Doping measurements
