WT-2000 晶圆测试系统

SOI 和 Epi 结构的寿命测量

作者: T. Pavelka, Z. Batari

主题: lifetime; SOI; EPI

用于测量多种半导体材料光电导衰减的多功能系统

作者: András Bojtor, Dávid Krisztián, Gábor Paráda, Ferenc Korsós, Sándor Kollarics, Gábor Csősz, Bence G. Márkus, László Forró, Ferenc Simon

主题: uPCD

通过光电导衰减和自由载流子吸收测量进行载流子寿命分析

作者: H-J. Schulze, A. Frohnmeyer, F.-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

主题: Silicon (Si); elemental semiconductors; carrier lifetime; photoconductivity

用于高功率器件的高电阻率硅的载流子寿命控制和表征

作者: H-J. Schulze, A. Frohnmeyer, F-J. Niedernostheide, F. Hille, P. Tüttő, T. Pavelka, G. Wachutka

主题: carrier lifetime; Silicon (Si); high power device

4H-SiC 外延层的载流子寿命映射和寿命研究

作者: J.D. Caldwell, P. B. Klein, O. Glembocki, K. Hobart, F. Kub, A. Pap, T. Pavelka, A. Shrivastava, Z. Zhang, T. Sudarshan, G. Webster

主题: carrier lifetime; silicon carbide (SiC); epilayer

使用升级的激光 E-PCD 技术测量单晶硅锭的载流子寿命

作者: D. Krisztián, F. Korsós, I. Saegh, G. Paráda, P. Tüttő, X. Dong and H. Deng, S. Wang, X. Chen

主题: carrier lifetime; Ingot; Monocrystalline; recombination; Silicon (Si); E-PCD CARRIER LIFETIME FOR MONO-S

n 型 In0.83Ga0.17As 中的载流子散射和弛豫动力学随温度和掺杂密度的变化

作者: Y. Ma, Y. Gu, Y. Zhang, X. Chen, S. Xi, Z. Boldizsár, L. Huang, L. Zhou

主题: Carrier scattering; relaxation dynamics; In0.83Ga0.17As

Charge Carrier Lifetime Modification in Silicon by High Energy H+ or He+ Ion

作者: Nucl. Inst. Meth. B127-128, 388-392

主题: carrier lifetime; Silicon (Si); Ion Implantation

Charge Carrier Lifetime Modification in Silicon by High Energy H+, He+ Ion Implantation

作者: N.Q. Khanh, P. Tüttő, E.N. Jaroli, O. Buiu, L.P. Bíró, F. Pászti, T. Mohácsy, Cs. Kovacsics, A. Manuaba, J. Gyulai

主题: Charge Carrier Lifetime; Excess Charge Pocket; Ion Implantation; Lifetime Tailoring; Microwave Photoconductive Decay (μ-PCD); Radiation Damage; Recombination Activity

用于在线质量控制的发射极片电阻率测量的比较研究

作者: E. Rüland, P. Fath, T. Pavelka, A. Pap, K. Peter, J. Mizsei

主题: diffusion; eddy current testing; Electrical resistivity; elemental semiconductors; phosphorus; quality control; Silicon (Si); solar cells; surface photovoltage

不同激光源制备的激光织构硅表面的比较

作者: Z. Tóth, A. Gárdián, M. Füle, J. Csontos, F. Korsós, P. Basa

主题: Laser Processing; Silicon (Si); Texturisation

非接触式测量光伏晶圆上的薄层电阻和反转电荷载流子迁移率

作者: Ferenc Korsós, Géza László, Péter Tüttő, Sebastien Dubois, Nicolas Enjalbert, Krisztián Kis-Szabó, Attila Tóth

主题: Characterisation; inversion layer sheet resistance; junction photovoltage technique; Non-contact; PV; SHEET RESISTANCE MEASUREMENT

具有 SiO2 和 HfO2 栅极电介质的硅衬底上反转电荷载流子的非接触迁移率测量

作者: J-L. Everaert, E. Rosseel, J. Dekoster, A. Pap, A. Mészáros, K. Kis-Szabó, T. Pavelka

主题: Dielectrics; Carrier mobility; Charge carriers; Dielectric thin films; Metrology

非接触式表面电荷半导体表征

作者: D.K. Schröder

主题: Silicon (Si); Electric measurements; Metal–insulator–semiconductor structures; Surface and interface states; Contact potential; Work function; Epitaxial silicon

高温下硅异质结结构的非接触式载流子寿命表征

作者: Gergely Havasi, Dávid Krisztián, (Zs. Gombás -BME-, Z. Ádám -EcoSolifer Heterojunction Ltd.), Ferenc Korsós

主题: laser controlled photoconductance decay (PCD)

集成电路制造中的污染减少和控制

作者: J.E. Steinle

通过在线电晕电荷计量控制激光诱导界面陷阱

作者: J-L. Everaert, E. Rosseel, C. Ortolland, M. Aoulaiche, T. Hoffmann, T. Pavelka, E. Don

主题: corona charge; in-line; traps

通过微波光电导衰减测量检测 p 型硅中的低水平铜污染

作者: M. Yil-Koski, M. Palokangas, A. Haarahiltunen, H. Vainöla, J. Storgards, H. Holmberg, J. Sinkkonen

主题: recombination of copper; Microwave Photoconductive Decay (μ-PCD); high-intensity bias light; interstitial copper; Ham's kinetics; Si–SiO2 interface

局部蚀刻和电热原子吸收光谱法测定硅片中的金属杂质

作者: H-Y. Chung, S-H Lee, Y-H. Kim, K-S. Lee, D-H. Kim

主题: metallic impurities distribution; etching technique; ET-AAS

为 i2 模块概念开发 a-Si:H/c-Si 异质结：在粘合到玻璃的晶圆上进行低温钝化和发射极形成

作者: J. Govaerts, S.N. Granata, T. Bearda, F. Dross, C. Boulord, G. Beaucarne, F. Korsós, K. Baert, I. Gordon, J. Poortmans

主题: PECVD; Heterojunction; Silicone bonding; Module-level processing

Element Specific Diagnosis Using Microwave Reflection Photoconductive Decay

作者: L. Köster, P. Blöchl, L. Fábry

主题: element specific drive-in treatments; Microwave Photoconductive Decay (μ-PCD); metal contamination; injection level; Schockley-Read-Hall-recombination model

高级浇口前清洁的评估

作者: C. Cowache, P. Boelen, I. Kashkoush, P Besson, F. Tardif

主题: pre-gate cleaning; particle removal; metal removal; surface microroughness; surface passivation

不同硅材料析出和剥蚀带深度的评价

作者: J.E. Steinle

First Results of the Solarcentre Erfurt - a New Pertner in Photovoltaic Research

作者: S. Dauwe, L. Mittelstadt, A. Lawerenz, H.J. Freitag,C. Beneking, H. Aulich

主题: Fourier transform infrared spectroscopy; Microwave-induced photoconductance decay; Light beam induced current mapping; Spectral Response

通过磷离子注入和退火去除无意污染的硅片

作者: M. Yli-Koski, J. Mellin, V. Ovchinnikov

主题: Gettering; Phosphorous Ion Implantation; Silicon (Si); surface photovoltage

Identification Possibility of Metallic Impurities in p-Type Silicon by Lifetime Measurement

作者: T.S. Horányi, P. Tüttő, Cs. Kovacsics

主题: oxidation; Silicon (Si); temperature; nitrogen compounds; oxygen compounds; quartz; surface treatment

激光退火热预算对高 Ge 含量薄 SiGe 通道质量的影响

作者: E. Rosseel, A. Hikavyy, J-L. Everaert, L. Witters, J. Mitard, T. Hoffmann, W. Vandervorst, A. Pap, T. Pavelka

主题: Ge-Si alloys; X-ray diffraction; elemental semiconductors; laser beam annealing; semiconductor epitaxial layers; semiconductor junctions; Silicon (Si)

使用光控加热在高温下记录隐含 J-V 曲线

作者: Gergely Havasi, Dávid Krisztián, Ferenc Korsós, Shaoyong Fu

主题: laser controlled photoconductance decay (PCD)

使用激光激励提高基于涡流传感器的载流子寿命测量的精度

作者: Dávid Krisztián*, Ferenc Korsós, Ilias Saegh, Gábor Paráda, Martin Kovács, Zita Verdon, Csaba Jobbágy, Péter Tüttö, Xueqian Dong, Hao Deng, Shasha Wang and Xiaobo Chen

主题: carrier lifetime; eddy current testing; photoconductive decay; E-PCD CARRIER LIFETIME FOR MONO-Si

利用臭氧去离子水生长的氧化硅层改善硅表面钝化

作者: Sara Bakhshi, Ngwe Zin, Kristopher O Davis, Marshall Wilson, Ismail Kashkoush, Winston V Schoenfeld

主题: aluminium compounds; aluminum oxide; carrier lifetime; passivation; photovoltaic cells; Silicon (Si); Silicon Nitride; surface passivation

In Situ Bulk Lifetime Measurement on Silicon with a Chemically Passivated Surface

作者: T.S. Horányi, T. Pavelka, P. Tüttő

主题: lifetime; Silicon (Si); passivated surface

Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

作者: G. Ferenczi, T. Pavelka, P. Tüttő

主题: contamination analysis; Silicon (Si)

实际和小扰动寿命的综合测量，提高了精度

作者: Dávid Krisztián; Ferenc Korsós; Enikő Kis; Gábor Paráda; Péter Tüttő

主题: carrier lifetime; lifetime measurements; photoconductive decay; solar cells

Investigation of Recombination Properties of Ti Double Donor in Silicon

作者: G. Ferenczi, T. Pavelka, P. Tüttő, L. Köster

主题: recombination; Ti donor; Silicon (Si)

通过升级的 μ-PCD 技术表征 mc:Si 砖的寿命

作者: F. Korsós, A. Jász

主题: Microwave Photoconductive Decay (μ-PCD); photoconductive decay; surface recombination

在重组多孔硅上生长的附着外延层和分离外延箔的寿命测量显示整体寿命超过 100 μs

作者: H.S. Radhakrishnan, M. Debucquoy, F. Korsós, K. Van Nieuwenhuysen, V. Depauw, I. Gordon, R. Mertens, J. Poortmans

主题: epilayer; bulk lifetime; porous silicon; surface recombination velocity; Microwave Photoconductive Decay (μ-PCD); QSSPC; PL; PC1D

通过红外相机绘制硅片的寿命图

作者: M. Bail, J. Kentsch, R. Brendel, M. Schulz

主题: carrier lifetime; infrared camera

用于光伏发电的低成本高效多晶硅

作者: M.B.I. Diaz, C. Haessler

主题: μ-PCD; etch pit density (EPD) mapping; resistivity topography

通过充分的 POCl3 扩散来利用低寿命的硅片

作者: J. Lossen, L. Mittelstadt, S. Dauwe, K. Lauer, C. Beneking

主题: carrier lifetime; POCl3; diffusion

使用载流子寿命方法测量 p 型硅中的铜

作者: M. Yli-Koski, H. Savin, E. Saarnilehto, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

主题: Copper (Cu); Silicon (Si); surface photovoltage; Microwave Photoconductive Decay (μ-PCD)

4H-SiC 外延层微波光电导衰变映射和寿命研究

作者: J.D. Caldwell, A. Pap, A. Shrivastava, Z. Zhang, P.B. Klein, T. Pavelka, T. Sudarshan, O.J. Glembocki, K. Hobart, F. Kub

主题: silicon carbide (SiC); photoconductive decay; epitaxial layer

CsPbBr3 钙钛矿中的毫秒级电荷载流子复合动力学

作者: András Bojtor, Dávid Krisztián, Ferenc Korsós, Sándor Kollarics, Gábor Paráda, Thomas Pinel, Márton Kollár, Endre Horváth, Xavier Mettan, Hidetsugu Shiozawa, Bence G. Márkus, László Forró, Ferenc Simon

主题: carrier density; carrier lifetime; Carrier mobility; Charge Carrier Lifetime; Charge carriers; photovoltaics; PV; recombination; Charge carrier density; PDL Hall

非均匀电荷载流子深度剖面的涡流测量建模

作者: D. Krisztián, F. Korsós, M. Kovács, F. Ujhelyi, P. Tüttö

主题: depth profile; eddy current testing; photovoltaic cells; PV; silicon solar cells; solar cells; EU PVSEC; EU PVSEC; European Photovoltaic Solar Energy Conference and Exhibition; Silicon PV; Semilab to present paper at Silicon PV; Silicon

通过电晕电荷测量监测 HfSiOx 的等离子体氮化

作者: J-L. Everaert, X. Shi, A. Rothschild, M. Schaekers, E. Rosseel, T. Pavelka, E. Don, S. Vanhaelemeersch

主题: HfSiO; Nitridation; corona charge; Gate dielectric; Gate leakage

New Possibilities for the Microwave Photoconductive Decay Technique

作者: T. Pavelka

基于 µ-PCD 的新方法用于分选硼和镓掺杂原料

作者: F. Korsós, G. Paráda, D. Fátay

主题: Wafer-Based Silicon Solar Cells; Silicon Feedstock; Crystallisation; Wafering; Microwave Photoconductive Decay (μ-PCD); carrier lifetime

工艺引起的氧化物和界面电荷及其与体硅中载流子的反应性

作者: J.E. Steinle

通过改进的 µ-PCD 技术鉴定外延层和界面特性

作者: T. Pavelka, D.C. Gupta and G.A. Brown

主题: Silicon (Si); epitaxial wafer; carrier lifetime; surface/interface recombination velocity

使用微波光电导衰减定量氧化 p 型硅片中的铜测量

作者: H. Vainola, E. Saarnilehto, M. Yli-Koski, A. Haarahiltunen, J. Sinkkonen, G. Berenyi, T. Pavelka

主题: Copper (Cu); illumination; precipitation; Silicon (Si); annealing

太阳能硅中点缺陷及其复合物的复合

作者: A.R. Peaker, V.P. Markevich, B. Hamilton, G. Parada, A. Dudás, A. Pap, E. Don, B. Lim, J. Schmidt, L. Yu, Y. Yoon, G. Rozgonyi

主题: Laplace deep level transient spectroscopy; minority carrier lifetime; passivation; recombination; silicon solar cells; transition metals

硅外延层复合和一代寿命表征

作者: D.K. Schroder, B.D. Choi, S.G. Kang, W. Ohashi, K. Kitahara, G. Opposits, T. Pavelka, J. Benton

主题: MOS capacitors; carrier lifetime; electron-hole recombination; semiconductor device measurement; semiconductor epitaxial layers; Silicon (Si); space-charge limited conduction

同时测量载流子浓度、迁移率和寿命

作者: Dávid Krisztián, Ferenc Korsós, Gergely Havasi

主题: carrier lifetime; Carrier mobility; Charge carriers; concentration profile; lifetime measurements; photoconductive decay; silicon solar cells

醌氢醌/乙醇处理对硅衬底的表面钝化效果

作者: H. Takato, I. Sakata, R. Shimokawa

主题: surface passivation; quinhydrone/ethanol treatment; Microwave Photoconductive Decay (μ-PCD)

n 型硅中载流子复合寿命的温度依赖性

作者: A. Frohnmeyer, F.-J. Niedernostheide, H.-J. Schulze, P. Tüttő, T. Pavelka, G. Wachutka

单晶硅锭寿命表征的瞬态方法

作者: G. Paráda, F. Korsós, P. Tüttő

主题: carrier lifetime; Monocrystalline; Ingot

Use of Non-Contact Resistivity Measurements for Epitaxy: Surface Charge Profiler Method

作者: A. Danel, F. Tardif, G. Kamarinos, M.C. Nguyen

主题: high purity silicon; Surface Charge Profiler (SCP); Doping measurements